Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
850 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
4.6 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Length
3mm
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
3.300 OMR
0.165 OMR Each (In a Pack of 20) (ex VAT)
3.465 OMR
0.173 OMR Each (In a Pack of 20) (inc. VAT)
20
3.300 OMR
0.165 OMR Each (In a Pack of 20) (ex VAT)
3.465 OMR
0.173 OMR Each (In a Pack of 20) (inc. VAT)
20
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 80 | 0.165 OMR | 3.300 OMR |
| 100 - 180 | 0.094 OMR | 1.870 OMR |
| 200 - 380 | 0.088 OMR | 1.760 OMR |
| 400 - 980 | 0.082 OMR | 1.650 OMR |
| 1000+ | 0.066 OMR | 1.320 OMR |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
850 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
4.6 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Length
3mm
Minimum Operating Temperature
-55 °C
Height
1mm
Product details


