N-Channel MOSFET, 850 mA, 100 V, 3-Pin SOT-23 Nexperia BSH114,215

RS Stock No.: 508-539Brand: NexperiaManufacturers Part No.: BSH114,215
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

850 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23 (TO-236AB)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

4.6 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Length

3mm

Minimum Operating Temperature

-55 °C

Height

1mm

Product details

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

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Stock information temporarily unavailable.

3.300 OMR

0.165 OMR Each (In a Pack of 20) (ex VAT)

3.465 OMR

0.173 OMR Each (In a Pack of 20) (inc. VAT)

N-Channel MOSFET, 850 mA, 100 V, 3-Pin SOT-23 Nexperia BSH114,215

3.300 OMR

0.165 OMR Each (In a Pack of 20) (ex VAT)

3.465 OMR

0.173 OMR Each (In a Pack of 20) (inc. VAT)

N-Channel MOSFET, 850 mA, 100 V, 3-Pin SOT-23 Nexperia BSH114,215
Stock information temporarily unavailable.

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
20 - 800.165 OMR3.300 OMR
100 - 1800.094 OMR1.870 OMR
200 - 3800.088 OMR1.760 OMR
400 - 9800.082 OMR1.650 OMR
1000+0.066 OMR1.320 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

850 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23 (TO-236AB)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

4.6 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Length

3mm

Minimum Operating Temperature

-55 °C

Height

1mm

Product details

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more