Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
Malaysia
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
2.750 OMR
0.028 OMR Each (On a Reel of 100) (ex VAT)
2.888 OMR
0.029 OMR Each (On a Reel of 100) (inc. VAT)
Standard
100
2.750 OMR
0.028 OMR Each (On a Reel of 100) (ex VAT)
2.888 OMR
0.029 OMR Each (On a Reel of 100) (inc. VAT)
Standard
100
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 100 | 0.028 OMR | 2.750 OMR |
| 200 - 400 | 0.028 OMR | 2.750 OMR |
| 500 - 900 | 0.022 OMR | 2.200 OMR |
| 1000 - 1900 | 0.016 OMR | 1.650 OMR |
| 2000+ | 0.016 OMR | 1.650 OMR |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
Malaysia
Product details


