Dual N-Channel MOSFET, 3.4 A, 30 V, 8-Pin SOIC Nexperia PHN210T,118
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
3.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1.45mm
Country of Origin
Thailand
Product details
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
0.908 OMR
0.182 OMR Each (In a Pack of 5) (ex VAT)
0.953 OMR
0.191 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
0.908 OMR
0.182 OMR Each (In a Pack of 5) (ex VAT)
0.953 OMR
0.191 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | 0.182 OMR | 0.908 OMR |
| 50 - 95 | 0.154 OMR | 0.770 OMR |
| 100 - 195 | 0.116 OMR | 0.578 OMR |
| 200 - 245 | 0.110 OMR | 0.550 OMR |
| 250+ | 0.110 OMR | 0.550 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
3.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1.45mm
Country of Origin
Thailand
Product details
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products