Technical Document
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
150 mA
Maximum Collector Emitter Voltage
500 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
50
Transistor Configuration
Single
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3 x 1.4 x 1.1mm
Country of Origin
China
Product details
High Voltage Transistors, Nexperia
Bipolar Transistors, Nexperia
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
25
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
25
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Technical Document
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
150 mA
Maximum Collector Emitter Voltage
500 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
50
Transistor Configuration
Single
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3 x 1.4 x 1.1mm
Country of Origin
China
Product details


