Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
3.850 OMR
0.192 OMR Each (In a Pack of 20) (ex VAT)
4.042 OMR
0.202 OMR Each (In a Pack of 20) (inc. VAT)
Standard
20
3.850 OMR
0.192 OMR Each (In a Pack of 20) (ex VAT)
4.042 OMR
0.202 OMR Each (In a Pack of 20) (inc. VAT)
Standard
20
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
20 - 20 | 0.192 OMR | 3.850 OMR |
40 - 80 | 0.143 OMR | 2.860 OMR |
100 - 180 | 0.110 OMR | 2.200 OMR |
200 - 380 | 0.104 OMR | 2.090 OMR |
400+ | 0.104 OMR | 2.090 OMR |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details