Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
415 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.4mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
61.268 OMR
2.042 OMR Each (In a Pack of 30) (ex VAT)
64.331 OMR
2.144 OMR Each (In a Pack of 30) (inc. VAT)
Standard
30
61.268 OMR
2.042 OMR Each (In a Pack of 30) (ex VAT)
64.331 OMR
2.144 OMR Each (In a Pack of 30) (inc. VAT)
Standard
30
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
30 - 30 | 2.042 OMR | 61.268 OMR |
60 - 120 | 2.037 OMR | 61.110 OMR |
150 - 270 | 1.958 OMR | 58.748 OMR |
300 - 570 | 1.932 OMR | 57.960 OMR |
600+ | 1.911 OMR | 57.330 OMR |
Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
415 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.4mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details