Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
272 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
3.086 OMR
1.028 OMR Each (In a Pack of 3) (ex VAT)
3.240 OMR
1.079 OMR Each (In a Pack of 3) (inc. VAT)
Standard
3
3.086 OMR
1.028 OMR Each (In a Pack of 3) (ex VAT)
3.240 OMR
1.079 OMR Each (In a Pack of 3) (inc. VAT)
Standard
3
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
3 - 27 | 1.028 OMR | 3.086 OMR |
30 - 72 | 0.946 OMR | 2.838 OMR |
75 - 147 | 0.886 OMR | 2.656 OMR |
150 - 297 | 0.820 OMR | 2.458 OMR |
300+ | 0.754 OMR | 2.260 OMR |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
272 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details