NXP PMBFJ308,215 N-Channel JFET, 25 V, Idss 12 to 60mA, 3-Pin SOT-23

RS Stock No.: 626-3308Brand: NXPManufacturers Part No.: PMBFJ308,215
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Technical Document

Specifications

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 60mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

-25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

50 Ω

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Country of Origin

China

Product details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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0.050 OMR

Each (In a Pack of 10) (ex VAT)

0.052 OMR

Each (In a Pack of 10) (inc VAT)

NXP PMBFJ308,215 N-Channel JFET, 25 V, Idss 12 to 60mA, 3-Pin SOT-23
Select packaging type

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
100.500 OMR
201.000 OMR
301.500 OMR
402.000 OMR
502.250 OMR
602.700 OMR
703.150 OMR
803.600 OMR
904.050 OMR
1004.500 OMR
1104.950 OMR
1205.400 OMR
1305.850 OMR
1406.300 OMR
1506.750 OMR

0.050 OMR

Each (In a Pack of 10) (ex VAT)

0.052 OMR

Each (In a Pack of 10) (inc VAT)

NXP PMBFJ308,215 N-Channel JFET, 25 V, Idss 12 to 60mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
100.500 OMR
201.000 OMR
301.500 OMR
402.000 OMR
502.250 OMR
602.700 OMR
703.150 OMR
803.600 OMR
904.050 OMR
1004.500 OMR
1104.950 OMR
1205.400 OMR
1305.850 OMR
1406.300 OMR
1506.750 OMR

Buy in bulk

quantityUnit pricePer Pack
10 - 400.050 OMR0.500 OMR
50 - 900.045 OMR0.450 OMR
100 - 2400.045 OMR0.450 OMR
250 - 4900.040 OMR0.400 OMR
500+0.035 OMR0.350 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 60mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

-25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

50 Ω

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Country of Origin

China

Product details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more