Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
20 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
48 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Width
2.3mm
Transistor Material
Si
Height
0.9mm
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P.O.A.
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P.O.A.
15
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
20 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
48 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Width
2.3mm
Transistor Material
Si
Height
0.9mm