Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
151 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
138 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5mm
Typical Gate Charge @ Vgs
60 @ 10 V nC
Maximum Operating Temperature
+150 °C
Width
6mm
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
1.05mm
Series
PowerTrench
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
1.100 OMR
Each (In a Pack of 10) (ex VAT)
1.155 OMR
Each (In a Pack of 10) (inc VAT)
10
1.100 OMR
Each (In a Pack of 10) (ex VAT)
1.155 OMR
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | 1.100 OMR | 11.000 OMR |
100 - 490 | 0.905 OMR | 9.050 OMR |
500 - 990 | 0.825 OMR | 8.250 OMR |
1000 - 1490 | 0.715 OMR | 7.150 OMR |
1500+ | 0.685 OMR | 6.850 OMR |
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
151 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
138 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5mm
Typical Gate Charge @ Vgs
60 @ 10 V nC
Maximum Operating Temperature
+150 °C
Width
6mm
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
1.05mm
Series
PowerTrench
Product details