Technical Document
Specifications
Brand
ON SemiconductorMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
278 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
16.25 x 5.3 x 21.4mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
2615pF
Maximum Operating Temperature
+175 °C
Energy Rating
0.65mJ
Country of Origin
Vietnam
Product details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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1.080 OMR
Each (In a Tube of 30) (ex VAT)
1.134 OMR
Each (In a Tube of 30) (inc VAT)
30
1.080 OMR
Each (In a Tube of 30) (ex VAT)
1.134 OMR
Each (In a Tube of 30) (inc VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 90 | 1.080 OMR | 32.400 OMR |
120 - 240 | 0.935 OMR | 28.050 OMR |
270 - 480 | 0.890 OMR | 26.700 OMR |
510 - 990 | 0.800 OMR | 24.000 OMR |
1020+ | 0.685 OMR | 20.550 OMR |
Technical Document
Specifications
Brand
ON SemiconductorMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
278 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
16.25 x 5.3 x 21.4mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
2615pF
Maximum Operating Temperature
+175 °C
Energy Rating
0.65mJ
Country of Origin
Vietnam
Product details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.