onsemi NGTB20N135IHRWG IGBT, 40 A 1350 V, 3-Pin TO-247, Through Hole
Technical Document
Specifications
Brand
ON SemiconductorMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
1350 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
394 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
16.25 x 5.3 x 21.4mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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1.855 OMR
Each (In a Pack of 2) (ex VAT)
1.948 OMR
Each (In a Pack of 2) (inc VAT)
2
1.855 OMR
Each (In a Pack of 2) (ex VAT)
1.948 OMR
Each (In a Pack of 2) (inc VAT)
2
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 4 | 1.855 OMR | 3.710 OMR |
| 6 - 10 | 1.630 OMR | 3.260 OMR |
| 12 - 38 | 1.500 OMR | 3.000 OMR |
| 40 - 98 | 1.415 OMR | 2.830 OMR |
| 100+ | 1.385 OMR | 2.770 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ON SemiconductorMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
1350 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
394 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
16.25 x 5.3 x 21.4mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products