Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1.5 A
Maximum Collector Emitter Voltage
-80 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
-80 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
8 x 3.25 x 11mm
Maximum Operating Temperature
+150 °C
Product details
Power PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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0.260 OMR
Each (In a Tube of 60) (ex VAT)
0.273 OMR
Each (In a Tube of 60) (inc. VAT)
60
0.260 OMR
Each (In a Tube of 60) (ex VAT)
0.273 OMR
Each (In a Tube of 60) (inc. VAT)
60
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
60 - 60 | 0.260 OMR | 15.600 OMR |
120 - 240 | 0.250 OMR | 15.000 OMR |
300+ | 0.240 OMR | 14.400 OMR |
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1.5 A
Maximum Collector Emitter Voltage
-80 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
-80 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
8 x 3.25 x 11mm
Maximum Operating Temperature
+150 °C
Product details
Power PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.