Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1.5 A
Maximum Collector Emitter Voltage
-80 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
-80 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
8 x 3.25 x 11mm
Maximum Operating Temperature
+150 °C
Product details
Power PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
17.820 OMR
0.297 OMR Each (In a Tube of 60) (ex VAT)
18.711 OMR
0.312 OMR Each (In a Tube of 60) (inc. VAT)
60
17.820 OMR
0.297 OMR Each (In a Tube of 60) (ex VAT)
18.711 OMR
0.312 OMR Each (In a Tube of 60) (inc. VAT)
60
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 60 - 60 | 0.297 OMR | 17.820 OMR |
| 120 - 240 | 0.275 OMR | 16.500 OMR |
| 300+ | 0.270 OMR | 16.170 OMR |
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1.5 A
Maximum Collector Emitter Voltage
-80 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
-80 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
8 x 3.25 x 11mm
Maximum Operating Temperature
+150 °C
Product details
Power PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.


