Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
115 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.9 x 4.5 x 15.7mm
Maximum Operating Temperature
+150 °C
Product details
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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0.405 OMR
Each (In a Tube of 50) (ex VAT)
0.425 OMR
Each (In a Tube of 50) (inc VAT)
50
0.405 OMR
Each (In a Tube of 50) (ex VAT)
0.425 OMR
Each (In a Tube of 50) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | 0.405 OMR | 20.250 OMR |
100 - 200 | 0.380 OMR | 19.000 OMR |
250+ | 0.360 OMR | 18.000 OMR |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
115 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.9 x 4.5 x 15.7mm
Maximum Operating Temperature
+150 °C
Product details
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.