Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Package Type
CPH3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
5.6 nC @ 4.5 V
Width
1.6mm
Transistor Material
Si
Forward Diode Voltage
1.2V
Height
0.9mm
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
4.950 OMR
0.198 OMR Each (In a Pack of 25) (ex VAT)
5.198 OMR
0.208 OMR Each (In a Pack of 25) (inc. VAT)
Standard
25
4.950 OMR
0.198 OMR Each (In a Pack of 25) (ex VAT)
5.198 OMR
0.208 OMR Each (In a Pack of 25) (inc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 100 | 0.198 OMR | 4.950 OMR |
| 125 - 225 | 0.099 OMR | 2.475 OMR |
| 250 - 475 | 0.094 OMR | 2.338 OMR |
| 500 - 975 | 0.094 OMR | 2.338 OMR |
| 1000+ | 0.072 OMR | 1.788 OMR |
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Package Type
CPH3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
5.6 nC @ 4.5 V
Width
1.6mm
Transistor Material
Si
Forward Diode Voltage
1.2V
Height
0.9mm
Product details


