Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Length
4.9mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Width
3.9mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Height
1.575mm
Product details
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
3.960 OMR
0.792 OMR Each (Supplied as a Tape) (ex VAT)
4.158 OMR
0.832 OMR Each (Supplied as a Tape) (inc. VAT)
Standard
5
3.960 OMR
0.792 OMR Each (Supplied as a Tape) (ex VAT)
4.158 OMR
0.832 OMR Each (Supplied as a Tape) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 5 - 5 | 0.792 OMR | 3.960 OMR |
| 10 - 95 | 0.770 OMR | 3.850 OMR |
| 100 - 245 | 0.754 OMR | 3.768 OMR |
| 250 - 495 | 0.732 OMR | 3.658 OMR |
| 500+ | 0.715 OMR | 3.575 OMR |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Length
4.9mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Width
3.9mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Height
1.575mm
Product details
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.


