onsemi FGA60N60UFDTU IGBT, 120 A 600 V, 3-Pin TO-3P, Through Hole
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
298 W
Package Type
TO-3P
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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2.992 OMR
2.992 OMR Each (ex VAT)
3.142 OMR
3.142 OMR Each (inc. VAT)
Standard
1
2.992 OMR
2.992 OMR Each (ex VAT)
3.142 OMR
3.142 OMR Each (inc. VAT)
Standard
1
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| Quantity | Unit price |
|---|---|
| 1 - 9 | 2.992 OMR |
| 10 - 24 | 2.668 OMR |
| 25 - 49 | 2.514 OMR |
| 50 - 99 | 2.332 OMR |
| 100+ | 2.167 OMR |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
298 W
Package Type
TO-3P
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products