Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
600 W
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
65.340 OMR
2.178 OMR Each (In a Tube of 30) (ex VAT)
68.607 OMR
2.287 OMR Each (In a Tube of 30) (inc. VAT)
30
65.340 OMR
2.178 OMR Each (In a Tube of 30) (ex VAT)
68.607 OMR
2.287 OMR Each (In a Tube of 30) (inc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Tube |
---|---|---|
30 - 90 | 2.178 OMR | 65.340 OMR |
120 - 240 | 1.914 OMR | 57.420 OMR |
270 - 480 | 1.870 OMR | 56.100 OMR |
510+ | 1.666 OMR | 49.995 OMR |
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
600 W
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.