Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
333 W
Package Type
TO-247
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.87 x 4.82 x 20.82mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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2.245 OMR
Each (In a Tube of 30) (ex VAT)
2.357 OMR
Each (In a Tube of 30) (inc VAT)
30
2.245 OMR
Each (In a Tube of 30) (ex VAT)
2.357 OMR
Each (In a Tube of 30) (inc VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 120 | 2.245 OMR | 67.350 OMR |
150+ | 1.950 OMR | 58.500 OMR |
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
333 W
Package Type
TO-247
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.87 x 4.82 x 20.82mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.