Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
1300 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
500 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.87 x 4.82 x 20.82mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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2.855 OMR
Each (In a Pack of 2) (ex VAT)
2.998 OMR
Each (In a Pack of 2) (inc VAT)
2
2.855 OMR
Each (In a Pack of 2) (ex VAT)
2.998 OMR
Each (In a Pack of 2) (inc VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | 2.855 OMR | 5.710 OMR |
10 - 98 | 2.420 OMR | 4.840 OMR |
100 - 248 | 1.940 OMR | 3.880 OMR |
250 - 498 | 1.825 OMR | 3.650 OMR |
500+ | 1.750 OMR | 3.500 OMR |
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
1300 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
500 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.87 x 4.82 x 20.82mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.