onsemi FGPF15N60UNDF IGBT, 30 A 600 V, 3-Pin TO-220F, Through Hole
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
42 W
Package Type
TO-220F
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.36 x 2.74 x 16.07mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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1.240 OMR
Each (Supplied in a Tube) (ex VAT)
1.302 OMR
Each (Supplied in a Tube) (inc VAT)
5
1.240 OMR
Each (Supplied in a Tube) (ex VAT)
1.302 OMR
Each (Supplied in a Tube) (inc VAT)
5
Buy in bulk
| quantity | Unit price | Per Tube |
|---|---|---|
| 5 - 5 | 1.240 OMR | 6.200 OMR |
| 10 - 95 | 1.065 OMR | 5.325 OMR |
| 100 - 245 | 0.825 OMR | 4.125 OMR |
| 250 - 495 | 0.795 OMR | 3.975 OMR |
| 500+ | 0.695 OMR | 3.475 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
42 W
Package Type
TO-220F
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.36 x 2.74 x 16.07mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products