Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Maximum Power Dissipation
50 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1200 V
Maximum Emitter Base Voltage
12 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.73 x 6.22 x 2.39mm
Product details
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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0.155 OMR
Each (Supplied on a Reel) (ex VAT)
0.163 OMR
Each (Supplied on a Reel) (inc VAT)
10
0.155 OMR
Each (Supplied on a Reel) (ex VAT)
0.163 OMR
Each (Supplied on a Reel) (inc VAT)
10
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Maximum Power Dissipation
50 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1200 V
Maximum Emitter Base Voltage
12 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.73 x 6.22 x 2.39mm
Product details
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.