Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
40 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
7 V
Maximum Operating Frequency
0.1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
8 x 3.25 x 11mm
Product details
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
2.310 OMR
0.038 OMR Each (In a Tube of 60) (ex VAT)
2.426 OMR
0.040 OMR Each (In a Tube of 60) (inc. VAT)
60
2.310 OMR
0.038 OMR Each (In a Tube of 60) (ex VAT)
2.426 OMR
0.040 OMR Each (In a Tube of 60) (inc. VAT)
60
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
40 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
7 V
Maximum Operating Frequency
0.1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
8 x 3.25 x 11mm
Product details
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.


