Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
384 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
16.25 x 5.3 x 21.4mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Country of Origin
China
Product details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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2.120 OMR
Each (In a Tube of 30) (ex VAT)
2.226 OMR
Each (In a Tube of 30) (inc VAT)
30
2.120 OMR
Each (In a Tube of 30) (ex VAT)
2.226 OMR
Each (In a Tube of 30) (inc VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 90 | 2.120 OMR | 63.600 OMR |
120 - 240 | 1.705 OMR | 51.150 OMR |
270 - 480 | 1.600 OMR | 48.000 OMR |
510 - 990 | 1.510 OMR | 45.300 OMR |
1020+ | 1.330 OMR | 39.900 OMR |
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
384 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
16.25 x 5.3 x 21.4mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Country of Origin
China
Product details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.