N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK onsemi NTD4809NG

RS Stock No.: 780-0523Brand: onsemiManufacturers Part No.: NTD4809NT4G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

2.63 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Width

6.22mm

Transistor Material

Si

Typical Gate Charge @ Vgs

11 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Height

2.38mm

Product details

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Stock information temporarily unavailable.

8.580 OMR

0.429 OMR Each (In a Pack of 20) (ex VAT)

9.009 OMR

0.450 OMR Each (In a Pack of 20) (inc. VAT)

N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK onsemi NTD4809NG
Select packaging type

8.580 OMR

0.429 OMR Each (In a Pack of 20) (ex VAT)

9.009 OMR

0.450 OMR Each (In a Pack of 20) (inc. VAT)

N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK onsemi NTD4809NG
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
20 - 200.429 OMR8.580 OMR
40 - 800.324 OMR6.490 OMR
100 - 1800.242 OMR4.840 OMR
200 - 3800.242 OMR4.840 OMR
400+0.236 OMR4.730 OMR

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

2.63 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Width

6.22mm

Transistor Material

Si

Typical Gate Charge @ Vgs

11 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Height

2.38mm

Product details

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more