onsemi Dual N-Channel MOSFET, 250 mA, 30 V, 6-Pin SOT-363 NTJD4001NT1G
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.72 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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110.250 OMR
0.037 OMR Each (On a Reel of 3000) (ex VAT)
115.762 OMR
0.039 OMR Each (On a Reel of 3000) (inc. VAT)
3000
110.250 OMR
0.037 OMR Each (On a Reel of 3000) (ex VAT)
115.762 OMR
0.039 OMR Each (On a Reel of 3000) (inc. VAT)
3000
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.72 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products