Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
3.025 OMR
0.121 OMR Each (In a Pack of 25) (ex VAT)
3.176 OMR
0.127 OMR Each (In a Pack of 25) (inc. VAT)
Standard
25
3.025 OMR
0.121 OMR Each (In a Pack of 25) (ex VAT)
3.176 OMR
0.127 OMR Each (In a Pack of 25) (inc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
25 - 75 | 0.121 OMR | 3.025 OMR |
100 - 225 | 0.104 OMR | 2.612 OMR |
250 - 475 | 0.094 OMR | 2.338 OMR |
500 - 975 | 0.082 OMR | 2.062 OMR |
1000+ | 0.077 OMR | 1.925 OMR |
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details