Technical Document
Specifications
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
250 mA, 880 mA
Maximum Drain Source Voltage
20 V, 30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω, 500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
270 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, -12 V, +12 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.
MOSFET Transistors, ON Semiconductor
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0.145 OMR
Each (Supplied as a Tape) (ex VAT)
0.152 OMR
Each (Supplied as a Tape) (inc VAT)
25
0.145 OMR
Each (Supplied as a Tape) (ex VAT)
0.152 OMR
Each (Supplied as a Tape) (inc VAT)
25
Buy in bulk
quantity | Unit price | Per Tape |
---|---|---|
25 - 100 | 0.145 OMR | 3.625 OMR |
125 - 225 | 0.135 OMR | 3.375 OMR |
250 - 600 | 0.130 OMR | 3.250 OMR |
625 - 1225 | 0.125 OMR | 3.125 OMR |
1250+ | 0.120 OMR | 3.000 OMR |
Technical Document
Specifications
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
250 mA, 880 mA
Maximum Drain Source Voltage
20 V, 30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω, 500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
270 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, -12 V, +12 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.