Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Length
2mm
Typical Gate Charge @ Vgs
5.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
2
Width
2mm
Minimum Operating Temperature
-55 °C
Height
0.75mm
Product details
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
2.365 OMR
0.236 OMR Each (Supplied as a Tape) (ex VAT)
2.483 OMR
0.248 OMR Each (Supplied as a Tape) (inc. VAT)
Standard
10
2.365 OMR
0.236 OMR Each (Supplied as a Tape) (ex VAT)
2.483 OMR
0.248 OMR Each (Supplied as a Tape) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 10 - 90 | 0.236 OMR | 2.365 OMR |
| 100 - 240 | 0.204 OMR | 2.035 OMR |
| 250 - 490 | 0.176 OMR | 1.760 OMR |
| 500 - 990 | 0.160 OMR | 1.595 OMR |
| 1000+ | 0.148 OMR | 1.485 OMR |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Length
2mm
Typical Gate Charge @ Vgs
5.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
2
Width
2mm
Minimum Operating Temperature
-55 °C
Height
0.75mm
Product details


