Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
63 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
12.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.28mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Width
15.75mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.82mm
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Stock information temporarily unavailable.
Please check again later.
0.385 OMR
Each (Supplied in a Tube) (ex VAT)
0.404 OMR
Each (Supplied in a Tube) (inc VAT)
20
0.385 OMR
Each (Supplied in a Tube) (ex VAT)
0.404 OMR
Each (Supplied in a Tube) (inc VAT)
20
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
20 - 80 | 0.385 OMR | 7.700 OMR |
100 - 240 | 0.290 OMR | 5.800 OMR |
260 - 480 | 0.285 OMR | 5.700 OMR |
500 - 980 | 0.255 OMR | 5.100 OMR |
1000+ | 0.215 OMR | 4.300 OMR |
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
63 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
12.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.28mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Width
15.75mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.82mm
Product details