Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
188 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
15.75mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.28mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
4.82mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
7.782 OMR
1.556 OMR Each (In a Pack of 5) (ex VAT)
8.171 OMR
1.634 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
7.782 OMR
1.556 OMR Each (In a Pack of 5) (ex VAT)
8.171 OMR
1.634 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
188 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
15.75mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.28mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
4.82mm
Minimum Operating Temperature
-55 °C
Product details