onsemi N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 NTR4003NT1G

RS Stock No.: 790-5283PBrand: onsemiManufacturers Part No.: NTR4003NT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

560 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

690 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.15 nC @ 5 V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Each (Supplied on a Reel) (ex VAT)

onsemi N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 NTR4003NT1G
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100P.O.A.
200P.O.A.
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500P.O.A.
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900P.O.A.
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1200P.O.A.
1300P.O.A.
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1500P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

onsemi N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 NTR4003NT1G
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 100.

Production -

Available in multiples of 100.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

100

Available in multiples of 100
100P.O.A.
200P.O.A.
300P.O.A.
400P.O.A.
500P.O.A.
600P.O.A.
700P.O.A.
800P.O.A.
900P.O.A.
1000P.O.A.
1100P.O.A.
1200P.O.A.
1300P.O.A.
1400P.O.A.
1500P.O.A.

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

560 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

690 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.15 nC @ 5 V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more