Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
5.1 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
2.200 OMR
0.088 OMR Each (In a Pack of 25) (ex VAT)
2.310 OMR
0.092 OMR Each (In a Pack of 25) (inc. VAT)
25
2.200 OMR
0.088 OMR Each (In a Pack of 25) (ex VAT)
2.310 OMR
0.092 OMR Each (In a Pack of 25) (inc. VAT)
Stock information temporarily unavailable.
25
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
25 - 75 | 0.088 OMR | 2.200 OMR |
100 - 225 | 0.077 OMR | 1.925 OMR |
250 - 475 | 0.066 OMR | 1.650 OMR |
500 - 975 | 0.060 OMR | 1.512 OMR |
1000+ | 0.055 OMR | 1.375 OMR |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
5.1 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Minimum Operating Temperature
-55 °C
Product details