Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.9mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
3.575 OMR
0.143 OMR Each (Supplied as a Tape) (ex VAT)
3.754 OMR
0.150 OMR Each (Supplied as a Tape) (inc. VAT)
Standard
25
3.575 OMR
0.143 OMR Each (Supplied as a Tape) (ex VAT)
3.754 OMR
0.150 OMR Each (Supplied as a Tape) (inc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 25 - 75 | 0.143 OMR | 3.575 OMR |
| 100 - 225 | 0.121 OMR | 3.025 OMR |
| 250 - 475 | 0.104 OMR | 2.612 OMR |
| 500 - 975 | 0.094 OMR | 2.338 OMR |
| 1000+ | 0.088 OMR | 2.200 OMR |
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.9mm
Minimum Operating Temperature
-55 °C
Product details


