onsemi Dual P-Channel MOSFET, 430 mA, 20 V, 6-Pin SOT-563 NTZD3152PT1G
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
430 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Width
1.3mm
Transistor Material
Si
Length
1.7mm
Typical Gate Charge @ Vgs
1.7 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.6mm
Minimum Operating Temperature
-55 °C
Product details
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
25
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
25
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Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
430 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Width
1.3mm
Transistor Material
Si
Length
1.7mm
Typical Gate Charge @ Vgs
1.7 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.6mm
Minimum Operating Temperature
-55 °C
Product details
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products