Renesas Electronics RJH65T47DPQ-A0#T0 IGBT, 90 A 650 V, 3-Pin TO-247A, Through Hole
Technical Document
Specifications
Brand
Renesas ElectronicsMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
375 W
Package Type
TO-247A
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.94 x 5.02 x 21.13mm
Gate Capacitance
3000pF
Maximum Operating Temperature
+175 °C
Country of Origin
China
Product details
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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2.515 OMR
Each (In a Pack of 2) (ex VAT)
2.641 OMR
Each (In a Pack of 2) (inc VAT)
2
2.515 OMR
Each (In a Pack of 2) (ex VAT)
2.641 OMR
Each (In a Pack of 2) (inc VAT)
2
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 18 | 2.515 OMR | 5.030 OMR |
| 20 - 38 | 2.100 OMR | 4.200 OMR |
| 40 - 198 | 1.945 OMR | 3.890 OMR |
| 200 - 398 | 1.810 OMR | 3.620 OMR |
| 400+ | 1.660 OMR | 3.320 OMR |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
Renesas ElectronicsMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
375 W
Package Type
TO-247A
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.94 x 5.02 x 21.13mm
Gate Capacitance
3000pF
Maximum Operating Temperature
+175 °C
Country of Origin
China
Product details
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products