Technical Document
Specifications
Brand
Renesas ElectronicsMaximum Continuous Collector Current
150 (Pulse) A
Maximum Collector Emitter Voltage
400 V
Maximum Gate Emitter Voltage
±6V
Maximum Power Dissipation
1.6 W
Package Type
TSOJ
Mounting Type
Surface Mount
Channel Type
N
Pin Count
8
Transistor Configuration
Single
Dimensions
3.1 x 2.5 x 1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
5100pF
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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0.545 OMR
Each (In a Pack of 4) (ex VAT)
0.572 OMR
Each (In a Pack of 4) (inc VAT)
4
0.545 OMR
Each (In a Pack of 4) (ex VAT)
0.572 OMR
Each (In a Pack of 4) (inc VAT)
4
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
4 - 36 | 0.545 OMR | 2.180 OMR |
40 - 76 | 0.450 OMR | 1.800 OMR |
80 - 196 | 0.410 OMR | 1.640 OMR |
200 - 396 | 0.390 OMR | 1.560 OMR |
400+ | 0.385 OMR | 1.540 OMR |
Technical Document
Specifications
Brand
Renesas ElectronicsMaximum Continuous Collector Current
150 (Pulse) A
Maximum Collector Emitter Voltage
400 V
Maximum Gate Emitter Voltage
±6V
Maximum Power Dissipation
1.6 W
Package Type
TSOJ
Mounting Type
Surface Mount
Channel Type
N
Pin Count
8
Transistor Configuration
Single
Dimensions
3.1 x 2.5 x 1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
5100pF
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.