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ROHM Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C BSM180D12P3C007

RS Stock No.: 144-2259Brand: ROHMManufacturers Part No.: BSM180D12P3C007
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Technical Document

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

1200 V

Series

BSM

Package Type

c

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

880 W

Number of Elements per Chip

2

Width

45.6mm

Length

122mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Height

17mm

Country of Origin

Japan

Product details

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor

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Stock information temporarily unavailable.

332.572 OMR

332.572 OMR Each (ex VAT)

349.201 OMR

349.201 OMR Each (inc. VAT)

ROHM Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C BSM180D12P3C007

332.572 OMR

332.572 OMR Each (ex VAT)

349.201 OMR

349.201 OMR Each (inc. VAT)

ROHM Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C BSM180D12P3C007
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

1200 V

Series

BSM

Package Type

c

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

880 W

Number of Elements per Chip

2

Width

45.6mm

Length

122mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Height

17mm

Country of Origin

Japan

Product details

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more