Dual P-Channel MOSFET, 4 A, 30 V, 8-Pin TSMT-8 ROHM QS8J4TR
Technical Document
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
TSMT-8
Series
QS8J4
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
84 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.5 W
Maximum Gate Source Voltage
±20 V
Width
2.5mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
13 nC @ 10 V (N Channel)
Forward Diode Voltage
1.2V
Height
0.8mm
Country of Origin
Japan
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0.175 OMR
Each (In a Pack of 10) (ex VAT)
0.184 OMR
Each (In a Pack of 10) (inc VAT)
10
0.175 OMR
Each (In a Pack of 10) (ex VAT)
0.184 OMR
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | 0.175 OMR | 1.750 OMR |
| 50 - 90 | 0.155 OMR | 1.550 OMR |
| 100 - 240 | 0.145 OMR | 1.450 OMR |
| 250 - 990 | 0.130 OMR | 1.300 OMR |
| 1000+ | 0.120 OMR | 1.200 OMR |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
TSMT-8
Series
QS8J4
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
84 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.5 W
Maximum Gate Source Voltage
±20 V
Width
2.5mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
13 nC @ 10 V (N Channel)
Forward Diode Voltage
1.2V
Height
0.8mm
Country of Origin
Japan
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products