Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Series
R6520ENX
Package Type
TO-220FM
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
4.8mm
Length
10.3mm
Typical Gate Charge @ Vgs
61 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
15.4mm
Country of Origin
Japan
3.370 OMR
1.685 OMR Each (In a Pack of 2) (ex VAT)
3.539 OMR
1.769 OMR Each (In a Pack of 2) (inc. VAT)
2
3.370 OMR
1.685 OMR Each (In a Pack of 2) (ex VAT)
3.539 OMR
1.769 OMR Each (In a Pack of 2) (inc. VAT)
2
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | 1.685 OMR | 3.370 OMR |
10 - 48 | 1.486 OMR | 2.972 OMR |
50 - 98 | 1.444 OMR | 2.888 OMR |
100 - 248 | 1.402 OMR | 2.804 OMR |
250+ | 1.376 OMR | 2.751 OMR |
Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Series
R6520ENX
Package Type
TO-220FM
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
4.8mm
Length
10.3mm
Typical Gate Charge @ Vgs
61 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
15.4mm
Country of Origin
Japan