Technical Document
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
20 V
Series
RTR030P02
Package Type
TSMT
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Width
1.6mm
Length
2.9mm
Typical Gate Charge @ Vgs
9.3 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.85mm
Product details
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
4.290 OMR
0.214 OMR Each (In a Pack of 20) (ex VAT)
4.504 OMR
0.225 OMR Each (In a Pack of 20) (inc. VAT)
20
4.290 OMR
0.214 OMR Each (In a Pack of 20) (ex VAT)
4.504 OMR
0.225 OMR Each (In a Pack of 20) (inc. VAT)
20
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 80 | 0.214 OMR | 4.290 OMR |
| 100 - 180 | 0.126 OMR | 2.530 OMR |
| 200 - 480 | 0.116 OMR | 2.310 OMR |
| 500+ | 0.116 OMR | 2.310 OMR |
Technical Document
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
20 V
Series
RTR030P02
Package Type
TSMT
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Width
1.6mm
Length
2.9mm
Typical Gate Charge @ Vgs
9.3 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.85mm
Product details


