Technical Document
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Series
RSJ250P10
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
9mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.1mm
Typical Gate Charge @ Vgs
60 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
4.5mm
Forward Diode Voltage
1.2V
Country of Origin
Korea, Republic Of
Product details
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
4.895 OMR
0.979 OMR Each (In a Pack of 5) (ex VAT)
5.140 OMR
1.028 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
4.895 OMR
0.979 OMR Each (In a Pack of 5) (ex VAT)
5.140 OMR
1.028 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | 0.979 OMR | 4.895 OMR |
25 - 45 | 0.792 OMR | 3.960 OMR |
50 - 120 | 0.754 OMR | 3.768 OMR |
125 - 245 | 0.715 OMR | 3.575 OMR |
250+ | 0.638 OMR | 3.190 OMR |
Technical Document
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Series
RSJ250P10
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
9mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.1mm
Typical Gate Charge @ Vgs
60 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
4.5mm
Forward Diode Voltage
1.2V
Country of Origin
Korea, Republic Of
Product details