Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
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Please check again later.
Stock information temporarily unavailable.
109.180 OMR
Each (Supplied in a Box) (ex VAT)
114.639 OMR
Each (Supplied in a Box) (inc VAT)
Semikron SKM200GB12F4 Half Bridge IGBT Transistor Module, 200 A 1200 V
Select packaging type
1
109.180 OMR
Each (Supplied in a Box) (ex VAT)
114.639 OMR
Each (Supplied in a Box) (inc VAT)
Semikron SKM200GB12F4 Half Bridge IGBT Transistor Module, 200 A 1200 V
Stock information temporarily unavailable.
Select packaging type
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 1 | 109.180 OMR |
2 - 3 | 98.260 OMR |
4 - 5 | 88.435 OMR |
6 - 7 | 79.595 OMR |
8+ | 72.470 OMR |
Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge