Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-2A
Maximum Collector Emitter Voltage Vceo
-60V
Package Type
SOT-23
Mount Type
Surface
Transistor Configuration
Single
Maximum Collector Base Voltage VCBO
-60V
Maximum Power Dissipation Pd
500mW
Transistor Polarity
PNP
Minimum DC Current Gain hFE
45
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Pin Count
3
Maximum Operating Temperature
150°C
Length
3.04mm
Height
1.4mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The device in a PNP transistor manufactured using new PB-HCD (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Stock information temporarily unavailable.
233.220 OMR
0.078 OMR Each (On a Reel of 3000) (ex VAT)
244.881 OMR
0.082 OMR Each (On a Reel of 3000) (inc. VAT)
3000
233.220 OMR
0.078 OMR Each (On a Reel of 3000) (ex VAT)
244.881 OMR
0.082 OMR Each (On a Reel of 3000) (inc. VAT)
Stock information temporarily unavailable.
3000
| Quantity | Unit price | Per Reel |
|---|---|---|
| 3000 - 3000 | 0.078 OMR | 233.220 OMR |
| 6000 - 6000 | 0.072 OMR | 215.280 OMR |
| 9000 - 21000 | 0.066 OMR | 197.340 OMR |
| 24000+ | 0.060 OMR | 179.400 OMR |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-2A
Maximum Collector Emitter Voltage Vceo
-60V
Package Type
SOT-23
Mount Type
Surface
Transistor Configuration
Single
Maximum Collector Base Voltage VCBO
-60V
Maximum Power Dissipation Pd
500mW
Transistor Polarity
PNP
Minimum DC Current Gain hFE
45
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Pin Count
3
Maximum Operating Temperature
150°C
Length
3.04mm
Height
1.4mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The device in a PNP transistor manufactured using new PB-HCD (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.