Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2U
Mount Type
Chassis
Pin Count
8
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
298nC
Minimum Operating Temperature
-40°C
Maximum Gate Source Voltage Vgs
18V
Forward Voltage Vf
2.9V
Maximum Operating Temperature
175°C
Transistor Configuration
3 Phase
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
Stock information temporarily unavailable.
162.100 OMR
162.100 OMR Each (ex VAT)
170.205 OMR
170.205 OMR Each (inc. VAT)
Standard
1
162.100 OMR
162.100 OMR Each (ex VAT)
170.205 OMR
170.205 OMR Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2U
Mount Type
Chassis
Pin Count
8
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
298nC
Minimum Operating Temperature
-40°C
Maximum Gate Source Voltage Vgs
18V
Forward Voltage Vf
2.9V
Maximum Operating Temperature
175°C
Transistor Configuration
3 Phase
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.