Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
800 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
70 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.4 x 4.6 x 15.75mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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0.550 OMR
Each (In a Tube of 75) (ex VAT)
0.578 OMR
Each (In a Tube of 75) (inc VAT)
75
0.550 OMR
Each (In a Tube of 75) (ex VAT)
0.578 OMR
Each (In a Tube of 75) (inc VAT)
75
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
75 - 75 | 0.550 OMR | 41.250 OMR |
150 - 150 | 0.415 OMR | 31.125 OMR |
225 - 450 | 0.400 OMR | 30.000 OMR |
525 - 900 | 0.350 OMR | 26.250 OMR |
975+ | 0.295 OMR | 22.125 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
800 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
70 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.4 x 4.6 x 15.75mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.