Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Collector Base Voltage
850 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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0.430 OMR
Each (In a Tube of 75) (ex VAT)
0.452 OMR
Each (In a Tube of 75) (inc VAT)
75
0.430 OMR
Each (In a Tube of 75) (ex VAT)
0.452 OMR
Each (In a Tube of 75) (inc VAT)
75
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
75 - 75 | 0.430 OMR | 32.250 OMR |
150 - 900 | 0.310 OMR | 23.250 OMR |
975+ | 0.210 OMR | 15.750 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Collector Base Voltage
850 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.