Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
60 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
180 W
Minimum DC Current Gain
9
Transistor Configuration
Single
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
7 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.3 x 15.9 x 5.3mm
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Stock information temporarily unavailable.
6.088 OMR
6.088 OMR Each (ex VAT)
6.392 OMR
6.392 OMR Each (inc. VAT)
Standard
1
6.088 OMR
6.088 OMR Each (ex VAT)
6.392 OMR
6.392 OMR Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
| Quantity | Unit price |
|---|---|
| 1 - 4 | 6.088 OMR |
| 5 - 9 | 5.786 OMR |
| 10 - 24 | 5.208 OMR |
| 25 - 49 | 4.708 OMR |
| 50+ | 4.609 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
60 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
180 W
Minimum DC Current Gain
9
Transistor Configuration
Single
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
7 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.3 x 15.9 x 5.3mm
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


