Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
Type N, Type P
Maximum Drain Source Voltage Vds
58V
Package Type
TQFP-64
Series
L98GD
Mount Type
Surface
Pin Count
64
Minimum Operating Temperature
-40°C
Maximum Gate Source Voltage Vgs
20V
Maximum Operating Temperature
150°C
Standards/Approvals
AEC-Q100
Width
1mm
Automotive Standard
AEC-Q100
Country of Origin
Malaysia
Product Details
The STMicroelectronics 8-channel MOSFET is a pre-driver configurable for low-side, high-side, Peak and hold and H-Bridge load control. It is designed to comply with the requirements of automotive passenger vehicles, as well as automotive commercial vehicles. The device offers the possibility of controlling two independent H-Bridges. The driver outputs are protected against short circuit condition, also protects the external MOS in case of an overcurrent event.
Stock information temporarily unavailable.
5.466 OMR
5.466 OMR Each (ex VAT)
5.739 OMR
5.739 OMR Each (inc. VAT)
1
5.466 OMR
5.466 OMR Each (ex VAT)
5.739 OMR
5.739 OMR Each (inc. VAT)
Stock information temporarily unavailable.
1
| Quantity | Unit price |
|---|---|
| 1 - 9 | 5.466 OMR |
| 10 - 49 | 4.623 OMR |
| 50 - 99 | 3.899 OMR |
| 100+ | 3.875 OMR |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
Type N, Type P
Maximum Drain Source Voltage Vds
58V
Package Type
TQFP-64
Series
L98GD
Mount Type
Surface
Pin Count
64
Minimum Operating Temperature
-40°C
Maximum Gate Source Voltage Vgs
20V
Maximum Operating Temperature
150°C
Standards/Approvals
AEC-Q100
Width
1mm
Automotive Standard
AEC-Q100
Country of Origin
Malaysia
Product Details
The STMicroelectronics 8-channel MOSFET is a pre-driver configurable for low-side, high-side, Peak and hold and H-Bridge load control. It is designed to comply with the requirements of automotive passenger vehicles, as well as automotive commercial vehicles. The device offers the possibility of controlling two independent H-Bridges. The driver outputs are protected against short circuit condition, also protects the external MOS in case of an overcurrent event.